KUALA LUMPUR : The world leader in memory solutions, Toshiba Memory Corporation, has started sampling the industry’s first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices.
The new lineup utilises the company’s cutting-edge, 96-layer BiCS FLASH™ 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB, a statement said.
The sequential read and write performance of the 512GB device are improved by approximately 70 per cent and 80 per cent, respectively, over previous generation devices.
The devices feature high-speed read or write performance and low power consumption which are suitable for applications such as mobile devices, smartphones, tablets, and augmented or virtual reality systems.
Additionally, the devices are compliant with JEDEC UFS Ver. 3.0, including HS-GEAR4, which has a theoretical interface speed of up to 11.6Gbps per lane (x2 lanes = 23.2Gbps) while also supporting features that suppress increases in power consumption. – Bernama
For more information, visit https://business.toshiba-memory.com.
