KUALA LUMPUR: Toshiba Electronic Devices & Storage Corporation (Toshiba) has added DTMOSVI(HSD), power MOSFETs with high-speed diodes to its latest-generation DTMOSVI series with a super junction structure.
According to Toshiba in a statement, shipments of the first two products “TK042N65Z5” and “TK095N65Z5”, 650 volt (V) N-channel power MOSFETs in TO-247 packages, have started.
The new products suitable for switching power supplies, including data centres and photovoltaic power conditioners, use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications.
Against the standard DTMOSVI, they achieve a 65 per cent reduction in reverse recovery time, and an 88 per cent reduction in reverse recovery charge.
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes and has a lower drain cut-off current at high temperatures.
The high temperature drain cut-off current of TK042N65Z5 is approximately 90 per cent lower, whereby this advance will cut equipment power loss and help to improve efficiency.
The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4 per cent, as measured in a 1.5 kiloWatt (kW) LLC circuit.
The company will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes, which will enhance switching power supply efficiency, contributing to energy-saving equipment. – BERNAMA
